NUS researchers develop brain-inspired memory device that can revolutionise semiconductor design

Many electronic devices today are dependent on semiconductor logic circuits based on switches hard-wired to perform predefined logic functions. Physicists from the National University of Singapore (NUS), together with an international team of researchers, have developed a novel molecular memristor, or an electronic memory device, that has exceptional memory reconfigurability.

LED Material Shines Under Strain

A team led by researchers at Lawrence Berkeley National Laboratory (Berkeley Lab) and UC Berkeley has demonstrated an approach for achieving LEDs with near 100% light-emission efficiency at all brightness levels.

This hydrogen fuel machine could be the ultimate guide to self improvement

Scientists at Berkeley have uncovered an extraordinary self-improving property that transforms an ordinary semiconductor into a highly efficient and stable artificial photosynthesis device

Breaking the Power & Speed Limit of Lasers

SUMMARYResearchers at the George Washington University have developed a new design of vertical-cavity surface-emitting laser (VCSEL) that demonstrates record-fast temporal bandwidth. This was possible by combining multiple transverse coupled cavities, which enhances optical feedback of the laser. VCSELs have emerged…

Scientists Capture Candid Snapshots of Electrons Harvesting Light at the Atomic Scale

A team of scientists led by Berkeley Lab has gained important new insight into electrons’ role in the harvesting of light in artificial photosynthesis systems.

Tiny Bubbles Make a Quantum Leap

Researchers at Columbia Engineering and Montana State University have found that placing sufficient strain in a 2D material creates localized states that can yield single-photon emitters. Using sophisticated optical microscopy techniques developed at Columbia over the past 3 years, the team was able to directly image these states for the first time, revealing that even at room temperature they are highly tunable and act as quantum dots, tightly confined pieces of semiconductors that emit light.

Emerging Wide Bandgap Semiconductor Devices Based on Silicon Carbide May Revolutionize Power Electronics

Silicon plays a central role within the semiconductor industry for microelectronic and nanoelectronic devices, and silicon wafers of high purity single-crystalline material can be obtained via a combination of liquid growth methods. In Applied Physics Reviews, researchers describe the atomic mechanisms governing extended defect kinetics in cubic silicon carbide, which has a diamondlike zincblende crystal structure that manifests stacking and anti-phase instabilities. The study pinpoints the atomistic mechanisms responsible for extended defect generation and evolution.

Columbia Researchers Develop New Method to Isolate Atomic Sheets and Create New Materials

Columbia researchers have invented a new method—using ultraflat gold films—to disassemble vdW single crystals layer by layer into monolayers with near-unity yield and with dimensions limited only by bulk crystal sizes. The monolayers have the same high quality as those created by conventional “Scotch tape” exfoliation, but are roughly a million times larger. They can be assembled into macroscopic artificial structures, with properties not easily created in conventionally grown bulk crystals.

Coronavirus multiple-times worse than SARS: Global supply-chain effect could exceed $400bn, linger up to 2 years — WashU expert

Panos Kouvelis 314-935-4604 [email protected]   Please read: Please watch:   Original post

The Beauty of Imperfections: Linking Atomic Defects to 2D Materials’ Electronic Properties

Scientists at Berkeley Lab have revealed how atomic defects emerge in transition metal dichalcogenides, and how those defects shape the 2D material’s electronic properties. Their findings could provide a versatile yet targeted platform for designing 2D materials for quantum information science.

Gordon Bell Finalist Team Tackles Transistors with New Programming Paradigm

A team simulated a 10,000-atom 2D transistor slice on the Summit supercomputer and mapped where heat is produced in a single transistor. Using a new data-centric version of the OMEN nanodevice simulator, the team sustained the code at 85.45 petaflops and earned a Gordon Bell Prize finalist nomination.