The performance of flexible large-area organic photodiodes has advanced to the point that they can now offer advantages over conventional silicon photodiode technology, particularly for applications such as biomedical imaging and biometric monitoring that require detecting low levels of light across large areas.
Scientists at Berkeley Lab have demonstrated a new technique that could improve the performance of atomically thin semiconductors for next-generation electronics such as optoelectronics, thermoelectrics, and sensors.
Finding ways to manage the flow of heat in silicon could boost the performance of semiconductors, but, so far, discovering the right design has remained elusive. Now, a team of Penn State researchers report that a fabrication technique may offer a path toward mastering the often chaotic flow of heat carriers at the nanoscale in silicon and other semiconductors.
Emerging Wide Bandgap Semiconductor Devices Based on Silicon Carbide May Revolutionize Power Electronics
Silicon plays a central role within the semiconductor industry for microelectronic and nanoelectronic devices, and silicon wafers of high purity single-crystalline material can be obtained via a combination of liquid growth methods. In Applied Physics Reviews, researchers describe the atomic mechanisms governing extended defect kinetics in cubic silicon carbide, which has a diamondlike zincblende crystal structure that manifests stacking and anti-phase instabilities. The study pinpoints the atomistic mechanisms responsible for extended defect generation and evolution.
Scientists have come up with a novel way to use silicon as an energy storage ingredient. They’ve developed a nanostructure incorporating carbon nanotubes to strengthen the material and modify the way silicon interacts with lithium, a key component in batteries used in electric cars and other devices.