Emerging Wide Bandgap Semiconductor Devices Based on Silicon Carbide May Revolutionize Power Electronics

Silicon plays a central role within the semiconductor industry for microelectronic and nanoelectronic devices, and silicon wafers of high purity single-crystalline material can be obtained via a combination of liquid growth methods. In Applied Physics Reviews, researchers describe the atomic mechanisms governing extended defect kinetics in cubic silicon carbide, which has a diamondlike zincblende crystal structure that manifests stacking and anti-phase instabilities. The study pinpoints the atomistic mechanisms responsible for extended defect generation and evolution.

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Gordon Bell Finalist Team Tackles Transistors with New Programming Paradigm

A team simulated a 10,000-atom 2D transistor slice on the Summit supercomputer and mapped where heat is produced in a single transistor. Using a new data-centric version of the OMEN nanodevice simulator, the team sustained the code at 85.45 petaflops and earned a Gordon Bell Prize finalist nomination.

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