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UrduScientists at Berkeley have uncovered an extraordinary self-improving property that transforms an ordinary semiconductor into a highly efficient and stable artificial photosynthesis device
Tag: Gallium Nitride
Room-temperature Bonded Interface Improves Cooling of Gallium Nitride Devices
A room-temperature bonding technique for integrating wide bandgap materials such as gallium nitride (GaN) with thermally-conducting materials such as diamond could boost the cooling effect on GaN devices and facilitate better performance through higher power levels, longer device lifetime, improved reliability and reduced manufacturing costs.