Innovative Ferroelectric Material Could Enable Next-Generation Memory Devices

Ferroelectric materials based on the element hafnium show promise for data storage devices. They offer high speed, durability, lower operating power, and the ability to retain data when power is turned off. This research developed an innovative bulk hafnia-based ferroelectric material. Experiments with the material produced the first experimental evidence of room-temperature ferroelectricity in crystals made of a hafnium-based compound, bulk yttrium doped hafnium dioxide.

Toward an Ultrahigh Energy Density Capacitor

Researchers at Berkeley Lab and UC Berkeley have demonstrated that a common material can be processed into a top-performing energy storage material. Their discovery could improve the efficiency, reliability, and robustness of personal electronics, wearable technologies, and car audio systems.