Innovative Ferroelectric Material Could Enable Next-Generation Memory Devices

Ferroelectric materials based on the element hafnium show promise for data storage devices. They offer high speed, durability, lower operating power, and the ability to retain data when power is turned off. This research developed an innovative bulk hafnia-based ferroelectric material. Experiments with the material produced the first experimental evidence of room-temperature ferroelectricity in crystals made of a hafnium-based compound, bulk yttrium doped hafnium dioxide.

Digital Content on Track to Equal Half Earth’s Mass by 2245

As we use resources to power massive computer farms and process digital information, our technological progress is redistributing Earth’s matter from physical atoms to digital information. Eventually, we will reach a point of full saturation, a period in our evolution in which digital bits will outnumber atoms on Earth, a world “mostly computer simulated and dominated by digital bits and computer code,” according to an article published in AIP Advances. It is just a matter of time.